Transistor reliability characterization and modeling of the 22FFL FinFET technology

This paper describes the transistor reliability of Intel's 22FFL FinFET technology, which includes an extensive variety of device offerings to enable high performance and low power design options. Detailed evaluations of BTI, TDDB, self-heating, and HCI are included to demonstrate the impact from the various device's pitch, channel length, and threshold voltage. Process integration details are included to highlight the interaction with reliability mechanisms. In addition, modeling results are shown to be well matched to silicon on both discrete devices and benchmark circuits.