Ambient temperature and layout impact on self-heating characterization in FinFET devices

Self-Heating effects are going to be of increasing significance in future nodes. Understanding self-heating measurement results and its accuracy is of vital importance. In this paper we show for the first time through measurement that the ambient temperature can affect self-heating measurement by up to 70%. Through a series of measurements at different temperatures and dissipated power, we show that the Si fin has a more dominant effect in heat transport and its varying thermal conductivity should be taken into account.