6H-SiC-Fe Nanostructures Studied by Atom Probe Tomography

Low-dose (2 at.%) Fe implantation in 6H-SiC (0001), followed by high-temperature annealing, is investigated with the aim of obtaining a diluted magnetic semiconductor (DMS). The effects of rapid thermal annealing on the microstructure were examined by atom probe tomography. The study shows the evidence of the formation of nanoclusters after annealing, some of which are magnetic. The structural study is correlated with the magnetic properties in order to determine the optimum conditions for fabricating a DMS.