A scalable drain current model of AlN/GaN MIS-HEMTs with embedded source field-plate structures

A scalable drain current model of AlN/GaN MIS-HEMTs has been developed for embedded source field-plate structures. The physically derived model is scalable to the length, width, and the number of fingers, and then implemented in a circuit simulator with Verilog-A source codes. To apply the models to simulate power switching applications including DC-DC converters, the weak inversion to linear characteristics and the maximum drain current are important. The model is verified with measured data of three dimensions and two sets of multi-finger transistor TEGs that we fabricated with an embedded source field plate technology. The results show good agreements between measurements and simulations.