Generalized tri-state PWM method based high frequency SiC three-phase inverter

In this paper, a generalized tri-state pulse width modulation method (GTSPWM), which decreases the common-mode voltage and current (CMV/CMC), is proposed for Silicon Carbide (SiC) based three-phase two-level voltage-source inverters (VSIs). Mathematical analysis, simulations, and experimental results show that GTSPWM has superior characteristics in terms of reduced switching losses, lesser output current harmonic distortion, reduced DC link current ripple, and lower common mode voltage (CMV). With the usage of SiC MOSFETs, the switching frequency of VSIs can be increased appreciably and the performance of proposed PWM method could be further improved.