GaAs based charge-plasma transistor for parameters performance enhancement

Recently doping-less transistors using charge plasma concept has been presented which comprises of silicon material as substrate. In this paper, high electron mobility GaAs is used as alternative to silicon substrate. The drain induced barrier lowering (DIBL), sub-threshold swing (SS) and I
_On
/I
_Off
ratio are compared for both double gate Silicon junction-less field effect transistor (JL-DGFET) and GaAs doping-less field effect transistor (DL-DGFET). It is observed that leakage current in GaAs DL-DGFET decreases by 10 times which results in better I
_o
n/I
_Off
ratio. Also, GaAs DL-DGFET show the improvement in DIBL and sub-threshold swing by 68.42% and 6.04% respectively as compared with Silicon JL-DGFET. Further, variation of parameters with respect to temperature for GaAs DL-DGFET is also analyzed.