Improved tri-gate FinFET transistor with InGaAs

Inclusion of the III-V semiconductors in Field Effect Transistor technology is frequent, now days. In this paper, a tri-gate FinFET using InGaAs is proposed. Current carrying capability of the FinFET is usually large, since tri-gate structure, hence an appropriate doping in the channel would improve the ON and OFF characteristics of the device. To get an excellent I
_ON
/I
_off
, doping concentration in the channel and source/drain region is varied according to material requirements. Channel length L
_g
of the proposed device is 20 nm. With high-K dielectric H fO
₂
as oxide, metal gate-oxide stack in the FinFET is designed and simulations are performed. Simulation of FinFET with gate-oxide thickness t
_ox
= 1 nm and a channel width W
_c
= 10nm, exhibits I
_on
/I
_off
= 10.801 × 10
³
, subthreshold slope SS ≈ 62 mV/decade and drain-induced-barrier-lowering DIBL = 83.3 mV/V.