Characterization, and modeling of memristor devices

The memristor is a passive two-terminal device that has been invented in 1971 by L. Chua and manufactured in 2008 by a team led by R.S. Williams in HP Labs. Notwithstanding the knowledge of its ordinary basic I-V characteristics, its behavior not fully understood until now. Hence, it leads us to study the operating behavior of such device in order to classify and identify its basic characteristics. Recently, several memristor devices have been developed in the literature and modeling SPICE memristors seem to be an adequate modeling technique, for its simplicity and flexibility, in order to analyze memristor models using simple and effective methods. In this paper, we adapt a SPICE memristor model, based on the implementation of several parameters. This enables the changing on the I-V characteristics of the device in order to correlate different memristive characterization data using different types of voltage polarizations. Our simulation results demonstrate the flexibility and reliability of our work model. It has been committed to prove the basic I-V characteristics of such device, the switching behavior of this model for different applications (biological, neuromorphic...).