Investigation of Retention Behavior of TiOx/Al2O3 Resistive Memory and Its Failure Mechanism Based on Meyer–Neldel Rule

The understanding of failure behavior is one of the basic requirements for further development of nonvolatile resistive random access memory (RRAM) devices. In this paper, we show a detailed analysis of a temperature-dependent low-resistance state (LRS) retention failure behavior of RRAM based on TiO
_x
/Al
₂
O
₃
bilayer structure. The device is capable of showing good resistive switching properties with stable operating parameters. The LRS current conduction process is mostly dominated by the Fowler–Nordheim tunneling. Retention behavior has been studied with a wide range of temperatures from room temperature to 200 °C with different compliances. The experimental results of TiO
_x
/Al
₂
O
₃
bilayer resistive switching memory are further supported theoretically by the Meyer–Neldel rule, which is fit well to the retention failure time.