Bandgap reference circuit with sub-1-V operation in CMOS for signaling networks-on-chip on microsystems technology

A low-voltage bandgap voltage reference implemented in 90 nm CMOS process is designed, simulated, and measured for signaling networks-on-chip. The bandgap reference circuit is optimized in order to generate a temperature independent reference voltage. The overall circuit consists of a bandgap core circuit, an operational amplifier, and a bias circuit with start-up circuit. The measured result of temperature coefficient (TC) is 163 PPM/°C over 0°C to 90°C temperature ranges. The simulated power supply rejection ratio (PSRR) is 29 dB. The simulated start-up circuit reaction time is approximately 2.5 us. The overall chip area including dummy wiring, decoupling capacitor and pads is 0.133 (0.449 × 0.297) mm
²
.