Operation of high speed switching systems based on bipolar transistors in nuclear radiation environments

Operation of high speed switching system based on bipolar transistors in nuclear radiation environment was investigated either theoretically or experimentally. The switching equations of the active device and circuit were solved, where transient switching time parameters were computed. The study was extended to include the effects of different nuclear radiation types (neutrons, protons, electrons and gamma) on the devices, as well as their corresponding effects on the switching system behaviour.