Q-band self-biased MMIC LNAs using a 70 nm InGaAs/AlGaAs process

In this paper, two self-biased LNAs are presented. Such amplifiers operate in the Q-band, covering 4 GHz between 42 GHz and 46 GHz. Both structu res are 2-stage configurations, adopting for each stage the common source topology with inductive feedback. The total area occupation for each LNA is 3.0×1.2 mm
²
. Noise figure lower than 1.55 dB has been obtained for version 1 and 1.5 dB for version 2. In-band gain for both versions is comprised between 17 dB and 19 dB, with a ripple lower than 0.5 dBpp/GHz.