A Novel 1.2 kV 4H-SiC Buffered-Gate (BG) MOSFET: Analysis and Experimental Results

A novel 1.2-kV-rated 4H-SiC buffered-gate MOSFET (BG-MOSFET) structure is proposed and experimentally demonstrated to have superior high frequency figures-of-merit (HF-FOMs) for the first time. From the measured data on devices fabricated in a 6-in foundry, the BGMOSFET is demonstrated to have 4.0× and 2.6× smaller HF-FOM [R
_ON
× Q
_gd
], and 3.6× and 2.1× smaller HF-FOM [R
_ON
× C
_gd
], when compared with the conventional MOSFET and split-gate MOSFET, respectively.