Two stage 4–8 GHz, 5 W GaN-HEMT amplifier

In this paper, a two stage wideband power amplifier (PA) using surface mount dual-flat-no-lead (DFN) packaged gallium-nitride (GaN) devices is presented. Systematic source- and load-pull simulations have been used to find the optimum impedances across 70% fractional bandwidth (FBW). Wideband matching networks have been designed in PCB microstrip technology. Large signal measurement results demonstrate a delivered power greater than 5 W across 3.8 to 8.8 GHz. A high and flat power gain of around 15 ±1 dB with 20 to 38% power added efficiency (PAE) is achieved.