Low-Frequency Noise in Hybrid-Phase- Microstructure ITO-Stabilized ZnO Thin-Film Transistors

Low-frequency noise (LFN) in hybrid-phase-microstructure ITO-stabilized ZnO thin-film transistors is investigated. The measured drain current noise power spectral densities obey the classical 1/
$\text{f}^{\gamma }$
noise theory, with
$\gamma $
about 0.9. When
$V_{\mathrm {\textsf {gs}}} $
-
$V_{\mathrm {\textsf {th}}}$
is low, the gate voltage dependent noise data closely follow the carrier number with correlated mobility fluctuation (
$\Delta {N} - \Delta \mu $
) model, and the average Hooge’s
$\vphantom {_{\int }}$
parameter in the channel is extracted to be about
$1.1 \times 10^{-2}$
. Moreover, the contribution of contact resistance to LFN is further studied. Dominated by the channel and the contact, the normalized noise varies with two slopes (
${m} = -1$
.x and 0) with an increase of the effective gate voltage. Finally, the normalized noise versus drain current results are simulated by considering contact resistance.