Room Temperature Fabrication of High Quality ZrO2 Dielectric Films for High Performance Flexible Organic Transistor Applications

By using low-cost solution process and ultraviolet(UV) irradiation, we successfully fabricated high-quality ZrO
₂
films at room temperature. The ZrO
₂
films obtained with 1-h UV curing showed a very low leakage current (1.7 × 10
^-6
A/cm
²
at -3 V), a high breakdown electric field 7.9 MV/cm, a high bandgap (6.13 eV), and a high dielectric constant (17.8). The organic thin-film transistor made by solution-processed ZrO
₂
gate dielectric shows a greatly reduced operation voltage of 4 V, and a high drain current on/off ratio of 3.1 × 10
⁶
. Furthermore, we also clarified the electronic structures of ZrO
₂
films with UV cured or thermal annealing.This letter demonstrated that solution-processable ZrO
₂
film is promising for applications in future low power consumption electronic devices.