TCAD simulations of double gate tunnel field effect transistor with spacer drain overlap base on vertical Tunneling

Effects of the spacer-drain overlap on the performance parameters of the double gate tunnel field effect transistor is proposed and investigated in this paper. By proper fabrication of the spacer-drain overlap, we can obtain a lower sub-threshold swing, smaller short channel effect (SCEs), i.e. drain induced barrier lowering (DIBL), higher ON-state current (ION) and considerably less OFF-state current (IOFF). Here we also measure effects of the channel length variation of the device. In this paper, we compare the proposed device with single gate tunnel FET with spacer-drain overlap using vertical tunneling concept. So we can observed, that the proposed device gives better performance parameters.