A single transistor ferroelectric RAM with nondestructive readout operations

A nonvolatile single transistor type FRAM is proposed. To overcome the selection problem of one-transistor-type FRAM, each well is isolated from adjacent columns, hence, the well bias can be controlled individually and can be floating state. The results of HSPICE simulations showed the successful operations of the proposed cell array. The worst gate disturb voltage of unselected cell is less than 2 V, which satisfies V/3 rule.