Current-handling and switching performance of MOS-controlled thyristor (MCT) structures

Experimental results are reported for array-type MCT devices fabricated using a BiMOS process with additional power-specific fabrication steps. Stationary measurements of both the thyristor forward behavior and the intrinsic p-channel MOSFET switch characteristics are an indication of the device quality. Through dynamic testing procedures, the device was analyzed in its transient current handling. The combination of anode current and blocking voltage values is the highest ever reported on MCT devices (2 kV, 5 A, in 2 mu s).<
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