OMCVD-grown In/sub 0.4/Al/sub 0.6/As/InP quantum-well HEMT

The transport properties and device characteristics of pseudomorphic In/sub 0.4/Al/sub 0.6/As/InP modulation-doped heterostructures are investigated. The existence of a two-dimensional electron gas at the heterojunction was confirmed by Shubnikov-de Haas measurements. A high electron mobility transistor (HEMT) having a gate length of 1.5 mu m showed extrinsic transconductances and drain current densities as high as 160 mS/mm and 300 mA/mm, respectively. The HEMT also showed a very small output conductance of less than 2 mS/mm and high gate-drain breakdown voltage of larger than 15 V. These results show the great potential of this HEMT for high-voltage gain and high-power microwave applications.<
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