A bandgap circuit operating up to 300/spl deg/C using lateral bipolar transistors in thin-film CMOS-SOI technology

A voltage reference circuit with 3 V output has been designed and implemented in an SOI FD (fully-depleted) CMOS technology for very wide temperature range applications. The design uses lateral bipolar transistors and thin-film diffusion resistors. The circuit has been fabricated and tested over the full operating temperature range (25/spl deg/C-300/spl deg/C) and provides a temperature coefficient better than 100 ppm//spl deg/C.