Numerical computation of the physical shielding factor for different structures of MOSFET in gamma irradiation field

In this study conducted numerical experiments aimed to determine the physical shielding factors (PSF) for two different MOSFET structures. The purpose of this paper was to present the new possibilities of the Monte Carlo numerical simulations for interaction of gamma irradiation of
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Co and
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Cs with semiconductor devices that are often located as dosimeters together with complex electronics power systems. The transport of incident photon particles is simulated with Monte Carlo code FOTELP-2014. When kovar is used as a lid in the gamma radiation field, the implemented calculations show that the PSF values for the ESAPMOS RADFET structure are significantly higher than the PSF values for the standard MOSFET structure.