Details and implementation of a SiC-based solid state transformer prototype

The paper's aim is to present the implementation details and results drawn from a solid state transformer (SST) prototype built on Silicon Carbide (SiC) MOSFETs, using a nanocrystalline-based high frequency transformer. Such combination becomes highly attractive from the viewpoint of feasibility for attaining the rating of an actual distribution transformer using simplest arrangements, which become a goal. This represents an advantage, since one of the main issues related to such device lies on balancing and control of the converters' multilevel structures. Results are quite promising.