Impact of SOI thickness scaling on alpha-particle irradiation performance of MOSFETs

For many years now, SOI devices have been used as microelectronic devices operating in space environment as they have limited silicon volume for charge collection. In this work, the impact of irradiation by alpha-particles with energy in the range of 0.1MeV-1MeV has been analyzed for bulk as well as SOI devices with varying SOI thickness. This work is done using 2-D TCAD with radiation parameters calibrated to Stopping and Range of Ions in Matter (SRIM). Our results show that as we scale the thickness of silicon-film in FD-SOI devices, radiation-induced peak drain current and hence collected charge reduces. However, scaling the silicon-film thickness in PD-SOI devices does not have as much impact as for FD-SOI devices.