An innovated JFET structure to adjust the pinch-off voltage by using a control gate

A novel N-JFET structure, combined with an innovative control gate between the uniform P-top and source is proposed. Control gate has a heavily doped P-type and a gap to uniform P-top. Pinch-off voltage of the JFET device can be easily adjusted by the size of the gap, while the breakdown voltage can be kept in the range of 700V ~ 800V. Rather than using 3D simulation which is more time consuming, this experiment uses 2D simulation for optimization and design.