In-plane magnetosensitive double Hall device

A novel in-plane magnetosensitive double Hall sensor, consisting of power supply and two identical three-contact n-Si cross-coupled architectures, realized in common technology process, is presented. High magnetosensitivity as well as increased metrological accuracy is achieved. The residual offset is about 160 times smaller than the internal ones. The obtained output voltage-to-residual offset ratio at magnetosensitivity of 98 V/AT (T = 300 K) is very promising, reaching 7.5×10
³
at magnetic induction IT.