Comparative analysis of junctionless bulk and SOI/SON FinFET

The characteristics of junctionless(JL) SON(Silicon on Nothing) FinFET, JL Bulk FinFET and SOI(Silicon on Insulator) JNT(Junctionless nanowire transistor) transistors were compared. A Silicon on nothing transistor have substrate with air filled dielectric. JL SON FinFET have better on/off current ratio and short channel effect (SCE) by reducing channel thickness due to substrate channel junction. The subthreshold slope is 63.2m V/dec and DIBL 82.68mV. the on/off current ratio is approximately 10
⁵
at channel thickness of 10nm. The variation in threshold voltage as N
_sub
varies from 10
¹⁷
to 10
¹⁸
cm
^-3
is about 33%. JL SON FinFET gives better on/off current ratio with the variation of work function.