FIB fabrication of highly ordered vertical Gaussian pillar nanostructures on silicon

We introduce and demonstrate highly ordered vertical Gaussian pillar anti-reflective nanostructures on single crystalline silicon. The pillars are fabricated using Focused Ion Beam (FIB) in a single step by adopting a unique approach and overlap of incoming FIB Gaussian profile. These pillars are highly ordered and reproducible in a time effective manner. Using FDTD calculations, we demonstrate the suitability of proposed Gaussian pillars for antireflection properties. The proposed structures exhibit maximum 10% reflection for a broad wavelength range of 400-1000 nm.