Comparative experimental study of the improved MOSFETs matching by using the hexagonal layout style

On this study, it is described an experimental comparative analysis of the devices matching regarding a 360 Metal-Oxide-Semiconductor Silicon-On-Insulator (SOI) Field Effect Transistors, n-type (nMOSFETs) sample, which were implemented with a hexagonal (Diamond) and rectangular gate geometries. Considering some relevant electrical parameters studied in the paper, the results indicate that the Diamond SOI nMOSFETs with α angles equal to 53.1° and 90° is able to be considered an alternative devices to boost about, at least 30% in average, the devices matching regarding those observed with the rectangular SOI MOSFET counterparts, considering the same gate areas and also the bias conditions.