A Tunable bipolar: Investigation of effects and a MEXTRAM based VerilogA model adaptation of field effect electrode influenced high voltage sige HBTs

This paper presents a Verilog-A compact model adaptation for a High Voltage SiGe HBT in a DTI on SOI process incorporating characteristic changes observed from a Field Effect Electrode. The output characteristics of the Bipolar are controlled, or “tuned”, by what is effectively an additional terminal. The model proposed is based on MEXTRAM and includes a new terminal node. The main additional effects are captured through the use of empirical formulae, while maintaining the bulk of the original code. The model is validated against DC and AC results from on-wafer Si test structures.