Silicon membranes manufactured by electrochemical etch stop technique

The paper presents silicon anisotropic etching experiments in KOH and TMAH solutions using the electrochemical etch-stop technique to control the thickness of silicon membranes. Under the best conditions (10% KOH, 80/spl deg/C), silicon membranes with 6-10 /spl mu/m thickness and a roughness of less than tens of nm were obtained.