Porous silicon surface stabilisation by anodic oxidation for optoelectronic applications

Electrochemical anodic stabilisation of porous silicon (PS) samples of different porosities (60-85%) was realised. Anodic oxidation by cyclic voltammetry (CV) was used to emphasize the importance of PS post-preparation storage conditions and the influence of the PS morphology. The partially oxidised PS samples were investigated by IR spectroscopy and by electrical measurements.