Tunable Low-Frequency Noise in Dual-Gate MoS2 Transistors

We have systematically studied the effect of the back-gate voltage on the low-frequency noise properties of the MoS
₂
transistors from 300 to 20 K in this work. The results show that the performance of the top-gate MoS
₂
transistor can be effectively tuned by the back-gate voltage Vbg. When Vbg increases to 20 V, the maximum on-current increases up to 588 μA/μm for the 1-μm channel length device, as well as five times reduction of the low-frequency noise and two times reduction in contact resistance. The Fermi-level modulation by adjusting Vbg turns out to be an effective way of improving contact resistance and low-frequency noise for future high-quality MoS
₂
metal-oxide-semiconductor field-effect transistors.