A temperature compensated overcurrent and short-circuit detection method for SiC MOSFET modules

This paper presents an overcurrent and short-circuit (SC) detection method for high current SiC MOSFET modules. It adapts the existing desaturation detection (= U
_CE
,
_de
s
_at
method) known from IGBTs. These adjustments include separate detection paths for hard switching faults (HSF) and fault under load (FUL) as well as overcurrent. The necessity of a junction temperature compensation for detecting each type of fault (HSF, FUL or overcurrent = OC) is discussed.