Experimental study on iron loss properties of an amorphous ring under different inverter excitations

This study focuses on an evaluation of iron losses of an amorphous ring under different inverter excitations. We examine the iron loss characteristics as a function of carrier frequency under Si-IGBT- and GaN-FET-inverter excitations. The ring test under GaN-FET-inverter excitation at high carrier frequency shows drastically large iron loss compared with that excited by Si-IGBT-inverter because of the ringing derived from the high speed switching.