Single event transient response of InGaSb p-MOSFETs using pulsed laser excitation: Comparison of buried-channel and surface-channel structures

Laser-induced, time-resolved charge-collection measurements for In
₀
.
₃₃
Ga
₀
.
₇₆
Sb p-channel MOSFETS are reported for two different device structures; a buried-channel (quantum well) and surface-channel design. The charge-collection transient response is reported for different gate bias conditions. The two structures reveal dramatically different charge-collection transient response. The buried-channel MOSFET exhibits a slowly relaxing decay component that can persist on the order of microseconds, whereas the surface-channel MOSFET has a transient response that decays within ~ 5 ns. The slowly-relaxing decay component previously has been associated with a charge enhancement processes that are eliminated in the surface-channel design. The collected charge is reduced by ~ 2 orders of magnitude in the surface-channel device, making this design a very attractive candidate for space applications.