The study of the sensitivity of CMOS integrated circuits to single event latchup using pulsed bremsstrahlung

The features of latchup triggering in CMOS integrated circuits (ICs) induced by high-intensity pulsed bremsstrahlung (PB) and heavy charged particles (HCP) are considered. The possibility of use of the critical charge model for the analysis of the experimental results obtained under global and local ionization of CMOS structure is shown. The approach to selection of single event latchup (SEL) hardened ICs using high-intensity PB is offered.