Killer defect detection using the IR-OBIRCH (infrared optical-beam-induced resistance-change) method

The IR-OBIRCH method has been applied to analyze real failures of DRAMs, ASICs, power MOSFETs, and microcomputers, which failed during mass production, development, user test, and ESD simulation. In the analysis of a microcomputer, in order to reproduce the failure state during IR-OBIRCH imaging, we applied test vectors from an ATE clocked to the IR-OBIRCH system. The results showed that the IR-OBIRCH is suitable not only for improving reliability but also for increasing yield.