High Q gallium nitride microring resonators

Summary form only given. Gallium nitride (GaN) is a promising material for nonlinear microresonators. It has large intrinsic χ
⁽²⁾
and χ
⁽³⁾
, excellent thermal properties and a relatively large bandgap [1] and can be used for example for parametric conversion and frequency doubling [2]. Furthermore it is quite resilient and can withstand high temperatures and power. In this paper, we demonstrate GaN microring resonators with a quality factor (Q) larger than 10
⁵
, which, to the best of our knowledge, is the highest demonstrated Q for microring resonators in a pure GaN platform [3].