1.5 μm laser diode on InP/Si substrate by epitaxial growth using direct bonding method

We have demonstrated for the first time 1.5 μm GaInAsP laser on silicon substrate using direct wafer bonding and MOVPE growth. The energy bandgap of bulk crystalline silicon is always a critical issue as it leads to the limitations of Si as light source devices for optical interconnection. We demonstrated the monolithic integration of hetero-epitaxial growth on InP/Si substrate via MOVPE. Our unique approach prior to growth is that we do the adhesion of InP substrate and Si substrate using hydrophilic wafer bonding technique. Using direct wafer bonding method, a successful GaInAsP lasing operation is obtained for the first time for 1.5 μm on InP/Si substrate.