A solar blind, hybrid III-nitride/silicon, ultraviolet avalanche photodiode

A novel, hybrid III-Nitride/Si, ultraviolet (UV) avalanche photodiode (APD) is proposed. The device combines the favorable short wavelength interband absorption properties of the direct bandgap III-Nitride material with the unique impact ionization characteristics of silicon. Solar blind response is achieved through optical isolation of the multiplication region of the device.