Interface properties of NO-annealed N/sub 2/O-grown oxynitride

The oxide/Si interface properties of gate dielectric prepared by annealing N/sub 2/O-grown oxide in an NO ambient are intensively investigated and compared to those of O/sub 2/-grown oxide with the same annealing conditions. Hot-carrier stressings show that the former has a harder oxide/Si interface and near-interface oxide than the latter. As confirmed by SIMS analysis, this is associated with a higher nitrogen peak concentration near the oxide/Si interface and a larger total nitrogen content in the former, both arising from the initial oxidation in N/sub 2/O instead of O/sub 2/.