Study and simulation of energy efficient realistic HIT solar cell defect states

This work is based on performance analysis of Heterojunction Intrinsic Thin Film (H-I-T) solar cells, on n type C-Si substrate using the numerical simulator automat for heterostructure, AFORS-HET. Effect of defect states density, have been considered consistently in p-type, intrinsic and n-type hydrogenated amorphous Silicon. A detailed analysis on band tails and defect states have been analyzed in the corresponding layers. Density of states study has been considered based on existing a-Si:H films in the literature. To understand cell performance within H-I-T solar cell structures, differently doped thin a-Si:H films have been considered in both emitter and BSF region, considering different film thicknesses. This helps to understand mechanism of charge trapping effects, and how accordingly density of states helps to influence built in field in the space charge region. This work is unique, and first of its kind, as it proposes a heterostructure with all possible defect states to make the model maximally realistic. This analysis is necessary for a perfectly optimized structure ready for fabrication at industrial level.