Comparative analysis of partial buried oxide germanium-on-insulator p-channel MOSFETs

In this paper comparative analysis of germanium-on-insulator (GeOI) p-channel MOSFET (PMOS), partial buried oxide (Pi-OX), Pi-OX with n
⁺
partial ground plane (PGP), and Pi-OX with δ-doping PMOS devices has been carried out. It has been found that, employing Pi-OX with δ-doping in Ge PMOS not only reduces the self-heating effect but also reduces the short-channel effects of the device. Further, off-state leakage current (/
_OFF
), drain induced barrier lowering (DIBL) and the subthreshold swing (S) in the case of GeOI Pi-OX-δ structure are reduced by ~44%, ~65% and ~37% respectively over the GeOI, GeOI Pi-OX, and GeOI Pi-OX-PGP structures. In addition to this, on-state drive current (I
_oN
) and I
_oN
/I
_oFF
in the case of GeOI Pi-OX-δ PMOS device are improved by ~10% and ~78% respectively over the GeOI, GeOI Pi-OX, and GeOI Pi-OX-PGP devices. This clearly shows that, GeOI Pi-OX-δ PMOS device is the most promising device for low-power high speed nanoscale integrated circuits.