Effect of gate length on the performance of InGaAs/InAs/InGaAs composite channel DMDG-HEMT devices

In this work the Impact of gate length (L
_g
) on the performance of InGaAs/InAs/InGaAs Composite Channel DMDG-HEMT Devices for high-Frequency Applications is investigated. The gate length (L
_g
) effects on the device characteristics are explored by optimizing the barrier thickness (T
_B
). It is evident that by introducing dual material gate (DMG), at both top and bottom of the device, shows increase in drain current, transconductance and higher I
_on
/I
_off
ratio with less short channel effects (SCEs) are observed. For (V
_ds
) =1V, InGaAs/InAs/InGaAs composite channel DMDG-HEMT devices exhibit the record drain current of I
_ds
=4.42 × 10
^-3
A/um, transconductance (g
_m
) = 4.48 S/mm, and I
_on
/I
_off
= 6.8 × 10
⁵
with reduced sub threshold slope (SS) of 62.1 mV/dec and a threshold voltage (V
_t
) = -0.12 V for 40 nm gate length.