Performance analysis of 2D Graphene FET embedded with hexagonal boron nitride clusters

Recently focus has been on performance enhancement of Graphene sheets by introducing lattice matched impurities for creating hybrid nanomaterials. In this study, we have studied Graphene monolayer sheet doped with hexagonal shaped boron nitride (hBN) unit cells. With tight binding and non-equilibrium Green's function (NEGF) we study transport in both zigzag or armchair directions of graphene sheets embedded with hexagonally shaped boron nitride (hBN) clusters. Our experimental simulation with 4 and 9 hBN unit cells reveals that the electronic properties have considerable variation depending not only upon transport direction but also with the pattern of unit cell doping in graphene sheet.