Performance enhancement of FinFETs at low temperature

In this work, performance analysis of strain-engineered MOSFETs has been performed through the use of the three temperature-dependent piezoresistive coefficients of silicon. As stress has a major impact on transistor characteristics in advanced devices, stress effects need to be determined from simulation in order to study the influence of from stress-related effects. We have investigated the effects of low temperature on the electrical performance of FinFETs. The physics-based 3D device simulation tool VictoryDevice is used for the simulations and characterization of the electrical properties of FinFETs. Performance enhancement is observed at low temperature.