Analytical threshold voltage model of gate all around triple metal tunnel FET

We analytically modeled the threshold voltage expression of Gate All Around Tripe Metal (GAATM) Tunnel FET in the present research endeavor. We have used the Trans-conductance Change Method (TCM) for extracting the threshold voltage of the GAATM TFET. The three different metals with different work functions are incorporated over the channel region, which helps to curb the ambipolar conduction and boost the ON current. The variability issues on the threshold voltage (V
_th
) are also studied and optimized the proposed GAATM TFET in terms of smaller V
_th
.