A novel dual-gate nano-scale InGaAs transistor with modified substrate geometry

Structures based on Indium Gallium Arsenide (InGaAs) have attracted a lot of interest in Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) technology recently. In this paper, a new nano-scale dual-gate MOSFET using Ino.75 Gao.25As is proposed. Multiple designs were simulated with different doping concentration in the source/drain region and the channel stop region to get an excellent I
_on
/I
_qff
. Since current in Metal-Oxide-Semiconductor (MOS) depends on the doping profile of the channel, a careful re-engineering of the channel would improve the MOSFET characteristics. Channel length, Lg of the proposed device is 20 nm which produces a significant amplification and supports large current due to wide channel interaction. Simulation of Ino.75 Gao.25 As MOSFET with L
_g
= 20 nm, gate-oxide thickness t
_oxGate1
= t
_oxGate2
= 2nm and a width Z = 1000nm, exhibits transconductance g
_{m_max}
≈ 293.626 μS/μm, subthreshold slope SS ≈ 70 mV/decade and drain-induced-barrier-lowering DIBL = 41.66 mV/V.