Modeling of high gain and μW level power consumption resonant tunneling diode based amplifiers

Modeling and theoretically analyzing of a novel K-band reflection based amplifier was performed utilizing the unique negative differential resistance (NDR) feature of an InGaAs/AlAs RTD. A 2.4 μm
²
mesa area device was fabricated and measured and on-wafer probe S-parameter measurements up to 40 GHz were carried out. Verification of the diode's equivalent circuit was experimentally validated and then employed to realize a K-band reflection based amplifier. The model was built in advanced design system software including a lumped element branch coupler with two active loads RTDs. Due to constructively combining the in-phase electromagnetic waves at the amplifier's output port, a high gain of 32 dB was achieved at 25.3 GHz while maintaining a very low DC power consumption of 100 μW. This corresponds to a record figure of merit of 320dB/mW to date, validating the excellent performance of the amplifier.